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Shape- and size-tunable synthesis of tin sulfide thin films for energy applications by electrodeposition

Size and shape tunable tin sulfide (SnS) thin film structures are successfully prepared by a simple cost-effective electrodeposition route. Scanning electron micrographs (SEM) effectively demonstrated the SnS shape modification. An ethylenediaminetetraacetic acid (EDTA) electrolyte was successfully...

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Bibliographic Details
Published in:Applied surface science 2019-06, Vol.479, p.167-176
Main Authors: Vikraman, Dhanasekaran, Thiagarajan, Shrividhya, Karuppasamy, K., Sanmugam, Anandhavelu, Choi, Jong-Hyeok, Prasanna, K., Maiyalagan, T., Thaiyan, Mahalingam, Kim, Hyun-Seok
Format: Article
Language:English
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Summary:Size and shape tunable tin sulfide (SnS) thin film structures are successfully prepared by a simple cost-effective electrodeposition route. Scanning electron micrographs (SEM) effectively demonstrated the SnS shape modification. An ethylenediaminetetraacetic acid (EDTA) electrolyte was successfully used to alter the size of SnS. The SEM results also give evidence of the surface modification of SnS which was prepared with EDTA. Atomic force micrographs established the topological variations of SnS. Energy dispersive X-ray results confirmed the stoichiometric composition SnS prepared with and without EDTA. X-ray diffraction results revealed the polycrystalline orthorhombic structure of the SnS thin film. The optical band gap derived from the Tauc's plot was found to be in the 1.23–1.26 eV range. The near band edge emission peak for SnS was observed using photoluminescence properties. This simple strategy to synthesize a smooth, dense-packed and crack-free morphology could be an attractive way to produce SnS as a capable material for energy harvesting and optoelectronic devices. [Display omitted] •Size and shape tunable SnS thin film structures successfully demonstrated•SEM and AFM micrographs proved the surface modification of SnS thin film.•EDTA provided the vital role in size modification of SnS by electrodeposition.•Tauc's plots derived the optical band gap in the range of 1.23–1.26 eV.•Near band edge luminescence behavior confirmed by PL
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2019.02.056