Amorphous SnS nanosheets/graphene oxide hybrid with efficient dielectric loss to improve the high-frequency electromagnetic wave absorption properties

• Published in: Applied surface science 2019-08, Vol.486, p.344-353
• Main Authors: Liu, Ying, Wu, Yanxia, Li, Kexun, Wang, Jian, Zhang, Caili, Ji, Jianlong, Wang, Wenjie
• Format: Article
• Language: English
• Subjects: Amorphous SnS nanosheets; Dielectric loss; Electromagnetic wave absorption properties; Graphene oxide
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2019.05.038

Tin monosulfide/graphene oxide (SnS/GO) hybrid with low crystallinity SnS nanosheets (NSs) grown on the surfaces of graphene oxide has been synthesized by a solvothermal method. The addition of GO can significantly restrain the aggregation of SnS NSs and effectively improve the permittivity properties. As a result, large surface areas, high void space, and strong dielectric loss are obtained in SnS/GO hybrid. The absorber with a filler loading of 45 wt% exhibits the highest absorption efficiency, from which the minimum reflection loss (RL) of −41.2 dB at 12.88 GHz as well as the absorption bandwidths of 3.67 GHz (from 11.36 GHz to 15.03 GHz) and 1.65 GHz (from 12.58 GHz to 14.23 GHz) below −10 dB and −20 dB, respectively, are achieved at an optimal thickness of 3.2 mm. Such enhancement in electromagnetic wave absorption behaviour is generally originated from the pronounced dipole and interfacial polarization relaxations, multiple reflections as well as good absorption attenuation, which are associated with its unique hierarchical architecture. These results demonstrate that tin sulfides based binary hybrids can be used as potential candidates for efficient electromagnetic wave absorbers in high-frequency electronic applications. Display Omitted •Amorphous SnS nanosheets are randomly grown on the surface of GO nanoflakes.•The SnS/GO hybrid achieves large surface areas, high void space and strong dielectric loss.•The hybrid exhibits significantly enhanced electromagnetic absorption properties compared with pure SnS and GO.•High polarization relaxations, multiple reflections and good attenuation capability are responsible for the improvement.