Weak antilocalization in Sb2Te3 nano-crystalline topological insulator

Microwave-assisted solvothermal route has been followed to synthesize Sb2Te3 nanomaterial. The morphology and topography of the material have been studied in FESEM and AFM measurements respectively. The optical band gap of the material is found to be ~ 0.25 eV as measured in IR spectroscopy. Tempera...

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Bibliographic Details
Published in:Applied surface science 2019-12, Vol.496, p.143654, Article 143654
Main Authors: Bera, Sumit, Behera, P., Mishra, A.K., Krishnan, M., Patidar, M.M., Venkatesh, R., Ganesan, V.
Format: Article
Language:English
Subjects:
Electron-electron interaction
Microwave synthesis
Nano-topological insulators
Optical band gap
Weak antilocalization
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Summary:Microwave-assisted solvothermal route has been followed to synthesize Sb2Te3 nanomaterial. The morphology and topography of the material have been studied in FESEM and AFM measurements respectively. The optical band gap of the material is found to be ~ 0.25 eV as measured in IR spectroscopy. Temperature dependent resistivity of the nanostructure shows thermal activation behavior in the high temperature region as well as it follows 3D Variable Range Hopping mechanism in the moderate temperature region. Electron-electron interaction and quantum interference dominated upturn in the resistivity is observed at T 
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2019.143654