Influence of precursor thin-film quality on the structural properties of large-area MoS2 films grown by sulfurization of MoO3 on c-sapphire

• Published in: Applied surface science 2021-02, Vol.540, p.148240, Article 148240
• Main Authors: Španková, M., Sojková, M., Dobročka, E., Hutár, P., Bodík, M., Munnik, F., Hulman, M., Chromik, Š.
• Format: Article
• Language: English
• Subjects: Molybdenum disulfide; Pulsed laser deposition; Sputtering; Structural properties; Sulfurization
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2020.148240

[Display omitted] •MoS2 films grown on c-plane sapphire were prepared from pre-deposited MoO3 layers by sulfurization.•Rf sputtering and pulsed laser deposition (PLD) techniques were used for MoO3 film preparation.•Higher crystalline perfection of PLD prepared MoO3 prevents the formation of in-plane ordering of sulfurized MoS2.•Growth of MoS2 films prepared from sputtered MoO3 layers show better crystalline quality.•The deposition method used for MoO3 growth plays important role in the final structural properties of MoS2 films. In recent years, molybdenum disulfide (MoS2) has been investigated due to its unique electronic, optical, and mechanical properties with a variety of applications. Sulfurization of pre-deposited MoO3 layers is one of the methods of the preparation of large-area MoS2 thin films. The MoO3 layers have been grown on c-sapphire substrates, using two different techniques (rf sputtering, pulsed laser deposition). The films were subsequently annealed in vapors of sulfur at high temperatures what converted them to MoS2 films. The quality of MoS2 is strongly influenced by the properties of the precursor MoO3 layers. The pre-deposited MoO3, as well as the sulfurized MoS2, have been characterized by several techniques including Raman, Rutherford backscattering spectroscopy, atomic force microscopy, scanning electron microscopy, and X-ray diffraction. Here we compare two types of MoS2 films prepared from different MoO3 layers to determine the most suitable MoO3 layer properties providing good quality MoS2 films for future applications.