A novel slurry for chemical mechanical polishing of single crystal diamond

[Display omitted] •The single crystal diamond (SCD) surface with ultra-low surface roughness and ultra-thin damage layer was obtained by CMP.•A novel CMP slurry was developed for the CMP of SCD consisting of SiO2, H2O2, FeSO4·7H2O, NTA and deionized water.•Under mixed effect of two oxidants, the pos...

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Bibliographic Details
Published in:Applied surface science 2021-10, Vol.564, p.150431, Article 150431
Main Authors: Liao, Longxing, Zhang, Zhenyu, Meng, Fanning, Liu, Dongdong, Wu, Bin, Li, Yubiao, Xie, Wenxiang
Format: Article
Language:English
Subjects:
Chemical mechanical polishing
Single crystal diamond
Slurry
Surface roughness
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Summary:[Display omitted] •The single crystal diamond (SCD) surface with ultra-low surface roughness and ultra-thin damage layer was obtained by CMP.•A novel CMP slurry was developed for the CMP of SCD consisting of SiO2, H2O2, FeSO4·7H2O, NTA and deionized water.•Under mixed effect of two oxidants, the post-polished surface quality of SCD was improved significantly.•The CMP mechanisms for a SCD were elucidated by XPS and IR measurements. Single crystal diamond (SCD) has extremely high hardness and wear resistance. However, this hampers the development of surfaces with ultra-low surface roughness and ultra-thin damage layer. It is particularly challenging to achieve the chemical mechanical polishing (CMP) of SCD with a surface roughness less than 0.5 nm and a damage layer thickness
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2021.150431