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Sequential growth of self-organized epitaxial FeSi2 and CoSi2 nanostructures on Si(111)-7 × 7 surfaces

[Display omitted] •Self-organized epitaxial γ-FeSi2 nanowires on 3° miscut vicinal on Si(111)-7 × 7.•γ-FeSi2 nanowires grow in three 〈110〉 equivalent in-plane directions on Si(111)-7 × 7.•Epitaxial CoSi2 growth on γ-FeSi2 nanowire decorated vicinal Si(111)-7 × 7 surfaces.•Self-organized cobalt disil...

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Published in:Applied surface science 2022-01, Vol.572, p.151397, Article 151397
Main Authors: Mahato, J.C., Das, Debolina, Pal, Arindam, Pal, Prabir, Dev, B.N.
Format: Article
Language:English
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Summary:[Display omitted] •Self-organized epitaxial γ-FeSi2 nanowires on 3° miscut vicinal on Si(111)-7 × 7.•γ-FeSi2 nanowires grow in three 〈110〉 equivalent in-plane directions on Si(111)-7 × 7.•Epitaxial CoSi2 growth on γ-FeSi2 nanowire decorated vicinal Si(111)-7 × 7 surfaces.•Self-organized cobalt disilcide preferably grows as triangular islands.•Self-organized distinct FeSi2 and CoSi2 fabrication on same vicinal on Si(111)-7 × 7. Epitaxial γ-FeSi2 and CoSi2 nanostructures, grown on a vicinal Si(111)-7 × 7 surface by sequentially depositing 1-monolayer (ML) of Fe and 1ML of Co on a hot Si substrate under ultrahigh vacuum condition, have been investigated by in-situ scanning tunneling microscopy, ex-situ field emission scanning electron microscopy and x-ray photoemission spectroscopy (XPS). While γ-FeSi2 nanostructures have grown as nanowires along the three equivalent 〈110〉 directions on the Si(111) surface, CoSi2 nanoislands have grown as equilateral triangular and trapezoidal islands. Such self-organized nanostructures may find applications in nanoscale devices including S-F hybrids for quantum technology, as CoSi2 is a superconductor (S) and γ-FeSi2 is a ferromagnet (F).
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2021.151397