Low-density arrays of ultra-small InAs nanostructures obtained by two-stage arsenic exposure during droplet epitaxy

[Display omitted] •Novel technique to obtain low-density quantum dots with a small size is developed.•Two-stage As exposure allows crystallization of In droplets with prior shrinkage.•InAs nanostructures obtained after two-stage As exposure have small size variation.•Proposed droplet epitaxial techn...

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Bibliographic Details
Published in:Applied surface science 2022-03, Vol.578, p.152023, Article 152023
Main Authors: Balakirev, Sergey V., Kirichenko, Danil V., Chernenko, Natalia E., Shandyba, Nikita A., Eremenko, Mikhail M., Ageev, Oleg. A., Solodovnik, Maxim S.
Format: Article
Language:English
Subjects:
Arsenic exposure
Droplet epitaxy
InAs/GaAs
Low-density arrays
Nanostructures
Quantum dots
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Summary:[Display omitted] •Novel technique to obtain low-density quantum dots with a small size is developed.•Two-stage As exposure allows crystallization of In droplets with prior shrinkage.•InAs nanostructures obtained after two-stage As exposure have small size variation.•Proposed droplet epitaxial technique demonstrates good reproducibility.•Better control of quantum dot size independently on the temperature is possible. In order to consider quantum dots as single objects and to use them in modern electronic and photonic devices, they must be well-isolated from each other and have an appropriate size and structural quality. This is a big challenge that is difficult to achieve with traditional technological methods, such as the Stranski-Krastanov growth mechanism. In this paper, we present a novel droplet epitaxial technique for the fabrication of small-sized (∼25 nm) InAs/GaAs nanostructures with a low surface density (
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2021.152023