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First-principles study of photocatalytic mechanism and charge transfer of PtS2/MoSe2 S-scheme heterojunction
[Display omitted] •The band structure, electron transport and optical properties of PtS2/MoSe2 heterojunction have been systematically investigated by density functional theory (DFT) calculations;•PtS2/MoSe2 heterojunction can be classified as S-scheme with strong redox ability catalyst of light bas...
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Published in: | Applied surface science 2022-10, Vol.600, p.154038, Article 154038 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | [Display omitted]
•The band structure, electron transport and optical properties of PtS2/MoSe2 heterojunction have been systematically investigated by density functional theory (DFT) calculations;•PtS2/MoSe2 heterojunction can be classified as S-scheme with strong redox ability catalyst of light based on the calculations;•Photocatalytic mechanism of PtS2/MoSe2 heterojunction has been explained.
In this work, the PtS2/MoSe2 heterojunction was verified as a S-scheme heterojunction with strong redox ability by density functional theory calculations. Firstly, the band structure and density of states of PtS2/MoSe2 heterojunction are systematically investigated. The results show that the band gap of the PtS2/MoSe2 heterojunction is effectively narrowed compared to the pristine semiconductor, resulting in a red shift of the absorption edge; then, According to the analysis of work function, the height difference of the Fermi level induces the spontaneous flow of electrons, resulting in band bending and the establishment of the built-in electric field, which will promote the recombination (separation) of electron-hole pairs with weak (strong) redox ability at the interface. The carriers with strong redox ability are effectively separated and preserved, which prolongs the lifetime of photogenerated carriers and improves the photocatalytic efficiency. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2022.154038 |