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Sn4+ doping enhanced inner electric field for photocatalytic performance promotion of BiOCl based nanoflowers

[Display omitted] •Sn doping was conducted by a template free solvothermal method.•Enhanced carrier separation and transfer without d-orbital introduction was realized.•Delocalization electrons on [Bi2O2]2+ layer facilitated photoinduced carrier generation.•Trend for distribution of internal electri...

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Published in:Applied surface science 2022-12, Vol.604, p.154498, Article 154498
Main Authors: Guan, Chongshang, Hou, Tian, Nie, Wuyang, Zhang, Qian, Duan, Libing, Zhao, Xiaoru
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creator Guan, Chongshang
Hou, Tian
Nie, Wuyang
Zhang, Qian
Duan, Libing
Zhao, Xiaoru
description [Display omitted] •Sn doping was conducted by a template free solvothermal method.•Enhanced carrier separation and transfer without d-orbital introduction was realized.•Delocalization electrons on [Bi2O2]2+ layer facilitated photoinduced carrier generation.•Trend for distribution of internal electric filed along [001] direction was promoted.•Promotion on photocatalytic without assistance by oxygen vacancy was achieved. BiOCl powders with different amounts of Sn doping (0, 5%, 10%, 20% versus molar amount of Bi, denoting as BOC, BOC-S5, BOC-S10, BOC-S20 respectively) were prepared by solvothermal method. Sn doping resultant effect on obtained samples and their photocatalytic performance were studied. All Sn doped BiOCl showed stronger photocatalytic degradation ability towards organic dye RhB compared with undoped one, where BOC-S10 with highest performance behaved 33% higher RhB degradation than BOC. Through relevant experiments and calculations, it’s found that Sn doping stimulated more dispersive electron localization in [Bi2O2]2+ layer, favorable for carrier generation, while introduction of Sn4+ also strengthened the inner polarization along [001] direction, which improved intrinsic inner electric field revulsive carrier separation. Changes on electronic structure promoted carrier generation and transfer, providing higher photocatalytic performance. Photocatalytic reduction of CO2 manifested that Sn doped samples also behaved larger potential on synthesizing CH4 through CO2 reduction and BOC-S10 still exhibited highest performance with CH4 yield 67% higher than BOC. All the results manifested that Sn doping introduced transformation beneficial to promote photocatalytic performance.
doi_str_mv 10.1016/j.apsusc.2022.154498
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BiOCl powders with different amounts of Sn doping (0, 5%, 10%, 20% versus molar amount of Bi, denoting as BOC, BOC-S5, BOC-S10, BOC-S20 respectively) were prepared by solvothermal method. Sn doping resultant effect on obtained samples and their photocatalytic performance were studied. All Sn doped BiOCl showed stronger photocatalytic degradation ability towards organic dye RhB compared with undoped one, where BOC-S10 with highest performance behaved 33% higher RhB degradation than BOC. Through relevant experiments and calculations, it’s found that Sn doping stimulated more dispersive electron localization in [Bi2O2]2+ layer, favorable for carrier generation, while introduction of Sn4+ also strengthened the inner polarization along [001] direction, which improved intrinsic inner electric field revulsive carrier separation. Changes on electronic structure promoted carrier generation and transfer, providing higher photocatalytic performance. Photocatalytic reduction of CO2 manifested that Sn doped samples also behaved larger potential on synthesizing CH4 through CO2 reduction and BOC-S10 still exhibited highest performance with CH4 yield 67% higher than BOC. All the results manifested that Sn doping introduced transformation beneficial to promote photocatalytic performance.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2022.154498</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Bismuth based ; CO2 reduction ; Inner electric field ; P-block ; Photocatalysis ; RhB ; Sn doping</subject><ispartof>Applied surface science, 2022-12, Vol.604, p.154498, Article 154498</ispartof><rights>2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c236t-79fedb60ce1212984487fa25a317e17c746d8807d134a2ebcc4c457028d4dcdb3</citedby><cites>FETCH-LOGICAL-c236t-79fedb60ce1212984487fa25a317e17c746d8807d134a2ebcc4c457028d4dcdb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Guan, Chongshang</creatorcontrib><creatorcontrib>Hou, Tian</creatorcontrib><creatorcontrib>Nie, Wuyang</creatorcontrib><creatorcontrib>Zhang, Qian</creatorcontrib><creatorcontrib>Duan, Libing</creatorcontrib><creatorcontrib>Zhao, Xiaoru</creatorcontrib><title>Sn4+ doping enhanced inner electric field for photocatalytic performance promotion of BiOCl based nanoflowers</title><title>Applied surface science</title><description>[Display omitted] •Sn doping was conducted by a template free solvothermal method.•Enhanced carrier separation and transfer without d-orbital introduction was realized.•Delocalization electrons on [Bi2O2]2+ layer facilitated photoinduced carrier generation.•Trend for distribution of internal electric filed along [001] direction was promoted.•Promotion on photocatalytic without assistance by oxygen vacancy was achieved. BiOCl powders with different amounts of Sn doping (0, 5%, 10%, 20% versus molar amount of Bi, denoting as BOC, BOC-S5, BOC-S10, BOC-S20 respectively) were prepared by solvothermal method. Sn doping resultant effect on obtained samples and their photocatalytic performance were studied. All Sn doped BiOCl showed stronger photocatalytic degradation ability towards organic dye RhB compared with undoped one, where BOC-S10 with highest performance behaved 33% higher RhB degradation than BOC. Through relevant experiments and calculations, it’s found that Sn doping stimulated more dispersive electron localization in [Bi2O2]2+ layer, favorable for carrier generation, while introduction of Sn4+ also strengthened the inner polarization along [001] direction, which improved intrinsic inner electric field revulsive carrier separation. Changes on electronic structure promoted carrier generation and transfer, providing higher photocatalytic performance. Photocatalytic reduction of CO2 manifested that Sn doped samples also behaved larger potential on synthesizing CH4 through CO2 reduction and BOC-S10 still exhibited highest performance with CH4 yield 67% higher than BOC. All the results manifested that Sn doping introduced transformation beneficial to promote photocatalytic performance.</description><subject>Bismuth based</subject><subject>CO2 reduction</subject><subject>Inner electric field</subject><subject>P-block</subject><subject>Photocatalysis</subject><subject>RhB</subject><subject>Sn doping</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-Aw-5S2uSpm16EXTxCxb2oJ5DmkzdLG1Skqrsvzelnj0NzDvPy_AgdE1JTgmtbg-5GuNX1DkjjOW05LwRJ2hFRV1kZSn4KVqlsybjRcHO0UWMB0IoS-kKDW-O32DjR-s-Mbi9choMts5BwNCDnoLVuLPQG9z5gMe9n7xWk-qPUwpGCGk7zBAegx_8ZL3DvsMPdrfpcatiKnPK-a73PxDiJTrrVB_h6m-u0cfT4_vmJdvunl8399tMs6KasrrpwLQV0UAZZY3gXNSdYqUqaA201jWvjBCkNrTgikGrNde8rAkThhtt2mKN-NKrg48xQCfHYAcVjpISOSuTB7kok7MyuShL2N2CQfrt20KQUVuYjdiQVEjj7f8Fv0Q4eNk</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>Guan, Chongshang</creator><creator>Hou, Tian</creator><creator>Nie, Wuyang</creator><creator>Zhang, Qian</creator><creator>Duan, Libing</creator><creator>Zhao, Xiaoru</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20221201</creationdate><title>Sn4+ doping enhanced inner electric field for photocatalytic performance promotion of BiOCl based nanoflowers</title><author>Guan, Chongshang ; Hou, Tian ; Nie, Wuyang ; Zhang, Qian ; Duan, Libing ; Zhao, Xiaoru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c236t-79fedb60ce1212984487fa25a317e17c746d8807d134a2ebcc4c457028d4dcdb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Bismuth based</topic><topic>CO2 reduction</topic><topic>Inner electric field</topic><topic>P-block</topic><topic>Photocatalysis</topic><topic>RhB</topic><topic>Sn doping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Guan, Chongshang</creatorcontrib><creatorcontrib>Hou, Tian</creatorcontrib><creatorcontrib>Nie, Wuyang</creatorcontrib><creatorcontrib>Zhang, Qian</creatorcontrib><creatorcontrib>Duan, Libing</creatorcontrib><creatorcontrib>Zhao, Xiaoru</creatorcontrib><collection>CrossRef</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guan, Chongshang</au><au>Hou, Tian</au><au>Nie, Wuyang</au><au>Zhang, Qian</au><au>Duan, Libing</au><au>Zhao, Xiaoru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sn4+ doping enhanced inner electric field for photocatalytic performance promotion of BiOCl based nanoflowers</atitle><jtitle>Applied surface science</jtitle><date>2022-12-01</date><risdate>2022</risdate><volume>604</volume><spage>154498</spage><pages>154498-</pages><artnum>154498</artnum><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>[Display omitted] •Sn doping was conducted by a template free solvothermal method.•Enhanced carrier separation and transfer without d-orbital introduction was realized.•Delocalization electrons on [Bi2O2]2+ layer facilitated photoinduced carrier generation.•Trend for distribution of internal electric filed along [001] direction was promoted.•Promotion on photocatalytic without assistance by oxygen vacancy was achieved. BiOCl powders with different amounts of Sn doping (0, 5%, 10%, 20% versus molar amount of Bi, denoting as BOC, BOC-S5, BOC-S10, BOC-S20 respectively) were prepared by solvothermal method. Sn doping resultant effect on obtained samples and their photocatalytic performance were studied. All Sn doped BiOCl showed stronger photocatalytic degradation ability towards organic dye RhB compared with undoped one, where BOC-S10 with highest performance behaved 33% higher RhB degradation than BOC. Through relevant experiments and calculations, it’s found that Sn doping stimulated more dispersive electron localization in [Bi2O2]2+ layer, favorable for carrier generation, while introduction of Sn4+ also strengthened the inner polarization along [001] direction, which improved intrinsic inner electric field revulsive carrier separation. Changes on electronic structure promoted carrier generation and transfer, providing higher photocatalytic performance. Photocatalytic reduction of CO2 manifested that Sn doped samples also behaved larger potential on synthesizing CH4 through CO2 reduction and BOC-S10 still exhibited highest performance with CH4 yield 67% higher than BOC. All the results manifested that Sn doping introduced transformation beneficial to promote photocatalytic performance.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2022.154498</doi></addata></record>
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subjects Bismuth based
CO2 reduction
Inner electric field
P-block
Photocatalysis
RhB
Sn doping
title Sn4+ doping enhanced inner electric field for photocatalytic performance promotion of BiOCl based nanoflowers
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