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A mathematical model of optical bistability and the multiplicity of its solutions

The problem of high-intensity laser pulse interaction with a semiconductor under the condition of the light energy nonlinear absorption is considered. Mathematical model of an optical bistability based on re-normalization of forbidden energy zone of a semiconductor because of the induced electric fi...

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Bibliographic Details
Published in:Journal of computational and applied mathematics 2019-07, Vol.354, p.663-681
Main Authors: Trofimov, Vyacheslav A., Loginova, Maria M., Egorenkov, Vladimir A.
Format: Article
Language:English
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Summary:The problem of high-intensity laser pulse interaction with a semiconductor under the condition of the light energy nonlinear absorption is considered. Mathematical model of an optical bistability based on re-normalization of forbidden energy zone of a semiconductor because of the induced electric field is presented. The multiplicity of the problem solutions at the Neumann boundary conditions statement is discussed and ways of its overcoming are proposed. The effective method for the numerical solution of the problem is developed and computer simulation results are presented.
ISSN:0377-0427
1879-1778
DOI:10.1016/j.cam.2018.12.001