Preparation and thermoelectric properties of quaternary bismuth telluride–indium selenide compound

Quaternary In–Se–Bi–Te compounds (7.5Bi 2Te 3–In 2Se 3 and 7.5Bi 2Te 3–In 4Se 3) were prepared by water quenching and annealing, and the microstructures and thermoelectric properties were investigated. These materials were solidified to near-eutectic compositions in order to obtain micro-scale heter...

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Bibliographic Details
Published in:Current applied physics 2011-07, Vol.11 (4), p.S46-S49
Main Authors: Yim, Ju-Hyuk, Jung, Kyooho, Yoo, Myong-Jae, Park, Hyung-Ho, Kim, Jin-Sang, Park, Chan
Format: Article
Language:English
Subjects:
annealing
Bi 2Te 3–Indium selenide
bismuth
microstructure
Phase separation
Thermal conductivity
Thermoelectric
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Summary:Quaternary In–Se–Bi–Te compounds (7.5Bi 2Te 3–In 2Se 3 and 7.5Bi 2Te 3–In 4Se 3) were prepared by water quenching and annealing, and the microstructures and thermoelectric properties were investigated. These materials were solidified to near-eutectic compositions in order to obtain micro-scale heterointerfaces. The formation of sub-micrometer-scale lamellae layers of Bi 2Te 3 and In–Se–Te compounds was observed. Through quenching, the 7.5Bi 2Te 3–In 2Se 3 consisted of a Bi 2Te 3 and In–Se–Te compound, while the 7.5Bi 2Te 3–In 4Se 3 was composed of Bi 2Te 3, BiTe, and In 4Se 3 and In–Se–Te. Both the microstructure and the constituent phases changed after annealing. The reduction of thermal conductivities, as compared to that of bulk Bi 2Te 3, was confirmed. This result can be attributed to the increased number of phase boundary areas. The size of the decomposed phase could be controlled by changing the parameters of the annealing process, which could further decrease the thermal conductivity.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2011.02.026