Enhanced efficiency and stability of polymer solar cells using solution-processed nickel oxide as hole transport material

• Published in: Current applied physics 2017-10, Vol.17 (10), p.1232-1237
• Main Authors: Parthiban, Shanmugam, Kim, Seungmin, Tamilavan, Vellaiappillai, Lee, Jihoon, Shin, Insoo, Yuvaraj, D., Jung, Yun Kyung, Hyun, Myung Ho, Jeong, Jung Hyun, Park, Sung Heum
• Format: Article
• Language: English
• Subjects: Hole transport layer; Nickel oxide; Polymer solar cell
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2017.06.002

Solution-processed nickel oxide (s-NiOx) was synthesized for use as hole-transport layers (HTLs) in the fabrication of polymer solar cell (PSC) devices. The s-NiOx thin-films were deposited using spin-coating and post-annealed at 300 °C, 400 °C, or 500 °C. With increased annealing temperature, the nickel acetate precursor decomposes more fully and forms s-NiOx films that show larger crystalline grain sizes with lower root mean square surface roughness. Bulk heterojunction solar cells fabricated with the new random polymer RP(BDT-PDBT) and [6,6]-phenyl-C70-butyric acid methyl ester (PC70BM) using s-NiOx as HTLs exhibit a 4.46% enhancement in power conversion efficiency and better stability compared to conventional PSCs using poly (3,4-ethylenedioxythiophene):poly(styrene sulfonate) as HTLs. We believe that the solution-processable and highly stable s-NiOx could be a potential alternative for functional interface materials in optoelectronic devices. •Solution-processed s-NiOx was synthesized for use as hole-transport layers in the fabrication of polymer solar cell.•The nickel acetate precursor fully decomposes and forms s-NiOx films with larger crystalline grain with lower roughness.•The device using s-NiOx layer exhibits the enhanced efficiency and better stability compared to conventional device.