Revealing the interlayer orientations for bilayer graphene grown on hexagonal boron nitride by c-AFM measurement

Owing to its excellent properties in optical and electronic applications, twisted bilayer graphene (TBG) has attracted extensive research attention. As an encapsulation layer, hexagonal boron nitride (h-BN) is indispensable for fabricating TBG devices. Because h-BN and graphene exhibit similar latti...

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Bibliographic Details
Published in:Carbon (New York) 2023-09, Vol.213, p.118271, Article 118271
Main Authors: Chen, Lingxiu, Jiang, Chengxin, Zhang, Shuai, Chen, Chen, Wang, Dehe, Wang, HuiShan, Wang, Xiujun, Li, Qunyang, Wang, Haomin
Format: Article
Language:English
Subjects:
c-AFM
Hexagonal boron nitride
Interlayer orientation
Moiré pattern
Twisted bilayer graphene
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Summary:Owing to its excellent properties in optical and electronic applications, twisted bilayer graphene (TBG) has attracted extensive research attention. As an encapsulation layer, hexagonal boron nitride (h-BN) is indispensable for fabricating TBG devices. Because h-BN and graphene exhibit similar lattice structures, TBG on h-BN exhibits periodic moiré patterns, which enable interlayer orientations to be revealed for bilayer graphene on h-BN. Herein, we used two-step chemical vapor deposition to synthesize TBG exhibiting multiple twist angles on h-BN. Conductive atomic force microscopy measurements revealed that the conductivity distribution was different for the graphene/h-BN and TBG moiré patterns. Using the characteristics of the moiré patterns formed by these layers, h-BN and graphene interlayer orientations were precisely determined. This provides a feasible method for investigating the turbostratic arrangement of few-layer van der Waals heterostructures. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2023.118271