Vertically implanting MoSe2 nanosheets on superior thin C-doped g-C3N4 nanosheets towards interface-enhanced electrochemical activities

• Published in: Carbon (New York) 2024-02, Vol.220, p.118884, Article 118884
• Main Authors: Zhang, Xiao, Zhu, Kaili, Xie, Cong, Yang, Ping
• Format: Article
• Language: English
• Subjects: g-C3N4; Heterostructures; Hydrogen evolution reaction; MoSe2; Nanosheets
• ISSN: 0008-6223; 1873-3891
• DOI: 10.1016/j.carbon.2024.118884

Fabrication of heterostructures with two layered semiconductors for attaining high activity and stability in hydrogen production has been challenging. Here, MoSe2 nanosheets are vertically and homogeneously implanted on superior thin C-doped graphitic carbon nitride (g-C3N4) nanosheets. Mo–N bonding plays a key role in the growth of MoSe2 nanosheets as well as the interfacial engineering in-between the MoSe2 and g-C3N4 components. The large surface area of g-C3N4 nanosheets is conducive to the uniform dispersion of MoSe2 and increased active edge sites. Carbon doping results in the formation of N vacancies on MoSe2/g-C3N4 heterostructures with increased unsaturated active sites. The electrocatalytic hydrogen evolution reaction performance of the MoSe2/g-C3N4 heterostructures is significantly improved in comparison with pure MoSe2. By optimizing the preparation conditions, a Tafel slope value of 54.1 mV/dec is obtained for the MoSe2/g-C3N4 heterostructure in acidic electrolyte condition (while a value of 100.89 mV/dec is attained for pure MoSe2), and an overpotential of 258 mV is obtained at 10 mA cm−2 (319.3 mV in case of pure MoSe2). The electrical double layer capacity of the MoSe2/g-C3N4 heterostructure measured is 16.05 mF/cm2 (4.35 mF/cm2 for MoSe2). These results provide inspiration on exploiting efficient electrocatalysts for water splitting via interfacial engineering. [Display omitted]