A simple thermoelectric device based on inorganic/organic composite thin film for energy harvesting

• Published in: Chemical engineering journal (Lausanne, Switzerland : 1996) Switzerland : 1996), 2017-07, Vol.320, p.201-210
• Main Authors: Li, Changcun, Jiang, Fengxing, Liu, Congcong, Wang, Wenfang, Li, Xuejing, Wang, Tongzhou, Xu, Jingkun
• Format: Article
• Language: English
• Subjects: PEDOT:PSS; Te-based nanowires; Thermoelectric device; Thin film
• ISSN: 1385-8947; 1873-3212
• DOI: 10.1016/j.cej.2017.03.023

A simple thermoelectric film device is designed by consisting of Bi2Te3 NWs film as n-type legs and Te-PEDOT:PSS as p-type legs, and exhibits a high output power density of 32μWcm−2 at temperature difference of 60K closed to that of commercial Bi2Te3. [Display omitted] •Te nanowires-PEDOT:PSS film shows good thermoelectric performance and stability.•A simple thermoelectric film device consists of Te-PEDOT:PSS and Bi2Te3 nanowires.•The film device exhibits a stable output voltage with a 60K temperature difference.•The power density of film device is closed to that of commercial Bi2Te3. Thermoelectric materials have been widely used in the power generation and cooling. Tellurium (Te) nanomaterial has gained great attention due to its enhanced thermoelectric performance, however, the researches are lacking of practical applications for energy harvesting. Here, a simple thermoelectric device was built with n-type and p-type Te-based (Bi2Te3 and Te-PEDOT:PSS composite) nanowires (NWs) thin film as legs for the first time. Firstly, a facile solution method was used to synthesize Te and Bi2Te3 NWs. A composite thin film was composed of Te NWs and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to achieve a higher thermoelectric performance and a better environmental stability. The thermoelectric thin film device, consisting of Bi2Te3 NWs as n-type leg and Te-PEDOT:PSS as p-type leg, exhibits a stable output voltage of 56mV and high output power density value of 32μWcm−2 at temperature difference of 60K, which is only 20% lower than that composed of commercial Bi2Te3. However, Te-based thin film device can effectively decrease its costs and be further improved to achieve a larger output voltage in the future.