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Dopant-free hole transport materials processed with green solvent for efficient perovskite solar cells
A new green-solvent-processable dopant-free hole transport material F23 was developed for efficient and stable perovskite solar cells, with a high power conversion efficiency of 17.6%. [Display omitted] •F23 was developed as dopant-free hole transport material (HTM) in perovskite solar cells (PSCs)....
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Published in: | Chemical engineering journal (Lausanne, Switzerland : 1996) Switzerland : 1996), 2020-04, Vol.385, p.123976, Article 123976 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
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Online Access: | Get full text |
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Summary: | A new green-solvent-processable dopant-free hole transport material F23 was developed for efficient and stable perovskite solar cells, with a high power conversion efficiency of 17.6%.
[Display omitted]
•F23 was developed as dopant-free hole transport material (HTM) in perovskite solar cells (PSCs).•Nonhalogenated green solvent tetrahydrofuran (THF) is used for F23 film fabricating and only small amount is required.•F23 film exhibits uniform and smooth morphology, with excellent hole transport property.•High efficiency (17.60%) with enhanced stability was achieved in F23-based PSCs.
At present, dopant-free hole transport materials (HTMs) have been largely explored to improve the performance and stability of perovskite solar cells (PSCs), and significant progresses have been made. In current reports, chlorobenzene is the most commonly used solvent to dissolve HTMs in PSCs. Dopant-free HTMs based on green solvent were rarely reported yet. Here in this work we synthesized a new dopant-free HTM F23, which could be processed with the nonhalogenated and environmental-friendly green solvent tetrahydrofuran (THF). Interestingly, F23 film prepared using THF as solvent exhibits uniform and smooth morphology, with excellent hole transport property. In addition, the process requires only a small amount of F23 (3 mg/mL), thus further lowering the costs in device fabrication. As a result, device using dopant-free F23 prepared in THF as HTM exhibited a high power conversion efficiency (PCE) of 17.60%, with enhanced stability. |
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ISSN: | 1385-8947 1873-3212 |
DOI: | 10.1016/j.cej.2019.123976 |