Controlled Zr doping for inkjet-printed ZTO TFTs

This study examined the effects of controlled Zr doping on the electrical properties of inkjet-printed zinc-tin oxide (ZTO) thin-film transistors (TFTs). In contrast to previous reports, below a certain doping concentration, improved electrical properties were obtained due to the effectively suppres...

Full description

Saved in:
Bibliographic Details
Published in:Ceramics international 2017-04, Vol.43 (6), p.4775-4779
Main Authors: Kim, Hunho, Choi, Woon-Seop
Format: Article
Language:English
Subjects:
Doping
Inkjet
Oxide TFTs
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study examined the effects of controlled Zr doping on the electrical properties of inkjet-printed zinc-tin oxide (ZTO) thin-film transistors (TFTs). In contrast to previous reports, below a certain doping concentration, improved electrical properties were obtained due to the effectively suppressed oxygen vacancies, reduced trapped electrons, and controlled carrier concentrations. The 0.0025M Zr-doped inkjet-printed ZTO TFTs showed higher mobility, higher on-to-off current ratio, lower threshold voltage, and lower subthreshold slope of 6.43cm2/Vs, 3.72×108, 3.35V, and 0.53V/dec, respectively, compared to the un-doped TFTs. The bias stability of the Zr-doped inkjet-printed ZTO TFT was also improved.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2016.11.165