Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO

The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probe...

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Bibliographic Details
Published in:Ceramics international 2017-07, Vol.43 (10), p.7784-7788
Main Authors: Lee, Seung-Hwan, Lee, Jung-Hoon, Choi, Seong-Jin, Park, Jin-Seong
Format: Article
Language:English
Subjects:
Atomic layer deposition
Ga doped ZnO
Thermoelectrics
Thin films
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Summary:The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250°C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 μV/K and an electrical conductivity of 1808.32S/cm, with a maximum power factor of 0.66mW/mK2.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2017.03.087