Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma

Silicon nitride (Si3N4) films have received great attention not only as dielectric materials for the gate dielectric of transistors and the insulator of capacitors, but also as a buffer layer and etch-stop layer for the semiconductor industry. As the applications of Si3N4 film increase, the necessit...

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Bibliographic Details
Published in:Ceramics international 2018-12, Vol.44 (17), p.20890-20895
Main Authors: Han, Ju-Hwan, Choi, Jin-Myung, Lee, Seong-Hyeon, Jeon, Woojin, Park, Jin-Seong
Format: Article
Language:English
Subjects:
Chemical state
Film degradation
PEALD
Silicon nitride
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Summary:Silicon nitride (Si3N4) films have received great attention not only as dielectric materials for the gate dielectric of transistors and the insulator of capacitors, but also as a buffer layer and etch-stop layer for the semiconductor industry. As the applications of Si3N4 film increase, the necessity of investigating a novel deposition process applicable at low temperature has emerged. In this regard, the plasma-enhanced atomic layer deposition (PEALD) technique is attractive as a promising process; however, the Si3N4 film deposition process at growth temperatures less than 150 °C using PEALD has not been investigated. In this work, the growth behavior and chemistry of SiNx (x 
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2018.08.095