High thermal conductive Cu-diamond composites synthesized by electrodeposition and the critical effects of additives on void-free composites

• Published in: Ceramics international 2019-11, Vol.45 (16), p.19658-19668
• Main Authors: Wu, Yongpeng, Tang, Zhiyong, Wang, Yan, Cheng, Ping, Wang, Hong, Ding, Guifu
• Format: Article
• Language: English
• Subjects: Additives; Copper matrix composites; Electrodeposition; High thermal conductivity; Void-free
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2019.06.215

This study presents high thermal conductivity (TC) Cu-diamond composites synthesized by electrodeposition and the critical effects of two kinds of competitive additives (DVF-B, accelerator, DVF-C, inhibitor) on electroplating void-free Cu matrix diamond composites. The surface and internal microstructures of the composites synthesized with different plating time are investigated, which show the critical effects of additives. Well-combined diamond/copper interfaces are promoted and void-free Cu-diamond composites are obtained, leading to the improved TC of 614.87 W/m K. The effects of DVF-B and DVF-C on microstructure, crystallization, interfacial combination of the composite materials are detailed investigated. Interestingly, DVF-B tends to promote copper fully filling in small and micro intervals formed by diamond particles, while DVF-C prefers to restrain copper deposition in large intervals and leveling copper nodules. Thus, voids/gaps and nodules are eliminated in Cu-diamond composites, leading to the well-combined interface and high TC. The concentrations of additive system are recommended as DVF-B of larger than 5 ml/L with DVF-C from 5 ml/L to 14 ml/L. This work utilizes the competitive additives for electroplating void-free copper matrix - diamond composites, which may solve the limitation of high TC Cu-diamond composites in microelectronic industry.