DC conductivity and threshold switching in iodine doped Ge-Se-Te glasses

The composition and temperature-dependent dc conductivity of (Ge20Se18Te62)100-xIx (x = 0 and 8) glasses have been studied. The activation energy at constant current decreases, whereas with composition, it increases. The I–V characteristic curves for the glassy compositions show threshold switching....

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Bibliographic Details
Published in:Ceramics international 2021-12, Vol.47 (23), p.33718-33724
Main Authors: Hegazy, H.H., Sati, Dinesh C., Sharma, Pankaj, Jaafari, M.A.
Format: Article
Language:English
Subjects:
Activation energy
dc conductivity
Electrical switching
Thermal breakdown
Thickness dependence
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Summary:The composition and temperature-dependent dc conductivity of (Ge20Se18Te62)100-xIx (x = 0 and 8) glasses have been studied. The activation energy at constant current decreases, whereas with composition, it increases. The I–V characteristic curves for the glassy compositions show threshold switching. Iodine content shows a remarkable effect when introduced in Ge-Se-Te glasses on the switching properties. Variation in the threshold voltage (Vth) with composition decreased from 334 to 308 V. The thickness and temperature dependency on Vth is also examined. With increasing temperature, the Vth decreases exponentially, whereas it increases as T2 with an increase in the thickness of the glass samples. The thermal breakdown ΔTbreakdown is also calculated. The threshold switching properties may be explored for numerous applications such as high-speed electronic memory and selector devices.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2021.08.281