Solution processed In2O3/IGO heterojunction thin film transistors with high carrier concentration

Nowadays, high-quality metal oxide thin film transistors grown by solution process have the most potential to replace the traditional a-Si TFT as the next generation of transparent electronics for various applications. However, the low intrinsic carrier concentration and poor charge carrier mobility...

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Bibliographic Details
Published in:Ceramics international 2021-12, Vol.47 (24), p.35029-35036
Main Authors: He, Fuchao, Wang, Yifei, Yuan, Haidong, Lin, Zhenhua, Su, Jie, Zhang, Jincheng, Chang, Jingjing, Hao, Yue
Format: Article
Language:English
Subjects:
Heterojunction
High-quality
Metal oxide
Solution process
Two-dimensional electron gas
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Summary:Nowadays, high-quality metal oxide thin film transistors grown by solution process have the most potential to replace the traditional a-Si TFT as the next generation of transparent electronics for various applications. However, the low intrinsic carrier concentration and poor charge carrier mobility of metal oxide thin film hinder its development. In order to solve these problems, the heterojunction structure was proposed. In this study, the Indium Oxide/Indium Gallium Oxide (In2O3/IGO) heterojunction was systematically investigated, and the existence of a two-dimensional electron gas was found. There is a large accumulation of carriers at the In2O3/IGO heterojunction interface, and the Hall tests show that the In2O3/IGO heterojunction has the highest carrier concentration of 7.82 × 1012 cm−2 and a carrier mobility of 10.22 cm2V−1s−1. This research can provide a theoretical guidance for promoting the development of oxide thin film transistor technology.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2021.09.044