3D printing Si3N4-bonded SiC refractories fabricated using colloidal films-containing slurries based on non-spherical SiC and Si powders

• Published in: Ceramics international 2023-09, Vol.49 (18), p.29433-29448
• Main Authors: Hao, Mingxuan, Yang, Daoyuan, Pan, Yarui, Liu, Yongliang, Zhu, Kai, Wang, Rui, Li, Xing, Zhao, Jingjing, Luo, Jiahua, Bai, Xiaosong, Qin, Hao, Leng, Jinyue, Zhang, Jiaxuan, Yuan, Huiyu, Cui, Junyan, Ma, Haoxuan
• Format: Article
• Language: English
• Subjects: 3D printing; Direct ink writing; Homogeneity during printing; Rheological properties; Si3N4-Bonded SiC refractory
• ISSN: 0272-8842
• DOI: 10.1016/j.ceramint.2023.06.008

Stable slurries for Si3N4-bonded SiC refractories for direct ink writing (DIW) were successfully prepared from a mixture of non-spherical silicon carbide (SiC) and silicon (Si) powders with an average particle size of D50 = 41.98 μm. The rheological properties and printability of slurries prepared using polyvinyl alcohol (PVA; 4–16 wt %) or hydroxypropyl methylcellulose (HPMC, 0.5–2 wt.%) were investigated with the effect of sintering temperature on the mechanical performance, phase, and microstructure of Si3N4-bonded SiC refractory products. The results indicated that slurries prepared with the HPMC solution showed better printability than those prepared with the PVA solution because colloidal films formed by HPMC in slurries play a role in encasing particles, preventing solid−liquid separation and contributing to plasticity and lubrication, which guarantees the smooth extrusion and homogeneity of slurries. The successful printing of SiC–Si slurries is not only related to proper viscosity, yield value, and shear thinning characteristics but it is also crucial for maintaining the homogeneity of slurries under extrusion pressure. Optimal SiC–Si slurries containing 52 vol % SiC–Si and 1.5 wt% HPMC exhibited proper viscosity, shear thinning, and homogeneity characteristics during printing. The obtained specimens achieved the best printing performance with height and section retention rates of 98.7% and 97.6%, respectively. When sintered at 1450 °C, Si3N4 fibres grow further and reach a diameter of 342.5 nm, the nitriding rate is 92.43%, the fibres tend to form a full network structure, and the mechanical properties of Si3N4-bonded SiC products are the best.