Improving supercapacitor and electro-catalytic efficiency via sustainable chalcogenides: Harnessing single-source precursors driven BaS3: Sb2S3: Dy2S3 for enhanced electrochemical performance

• Published in: Ceramics international 2025-01
• Main Authors: Ahmad, Khuram Shahzad, Jaffri, Shaan Bibi, Makawana, Bhumikaben, Gupta, Ram K., Ashraf, Ghulam Abbas, Usmani, Yusuf Siraj
• Format: Article
• Language: English
• Subjects: Cyclic voltammetry; Dithiocarbamates; Electrode performance; Impedance; Redox chemistry
• ISSN: 0272-8842
• DOI: 10.1016/j.ceramint.2024.12.546

The current study attempts to increase charge-storage device performance by exploiting the chalcogenide BaS3: Sb2S3: Dy2S3, and that is produced by chelation with a diethyldithiocarbamate ligand. This semiconductor's outstanding photoactivity enabled an energy band gap around 3.73 eV. The chalcogenide exhibited a median crystallite dimension of 18.1 nm, heterogeneous crystalline phases, and a high crystallinity. Infrared spectroscopy identified metallic sulfide links, which ranged from 550 to 960 cm−1. Furthermore, this sulphide was thermally degraded in two phases. Particles that exist in various shapes and have a larger volume-surface area ratio, with a predominance of equilateral structures. The electrochemical functionality of the BaS3: Sb2S3: Dy2S3 was assessed. BaS3: Sb2S3: Dy2S3 has an improved specific capacitance (769.82 F g−1) and a specific power density of about 11608.85 W kg−1. Furthermore, corroborating the remarkable electrochemical performance was Rs = 0.98 Ω. The electrode generated an OER overpotential and a matching Tafel slope of 422 mV and 183 mV dec−1 during electro-catalysis. Conversely, the Tafel slope and overpotential of the HER activity were 187 mV dec−1 and 196 mV, respectively. [Display omitted]