The transport gap of organic semiconductors studied using the combination of direct and inverse photoemission

The combination of valence band photoemission and inverse photoemission spectroscopy is applied to study the densities of occupied and unoccupied states of perylene derivative and phthalocyanine organic layers on inorganic semiconductors. The ionisation energies and electron affinities are determine...

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Bibliographic Details
Published in:Chemical physics 2006-06, Vol.325 (1), p.99-112
Main Authors: Zahn, Dietrich R.T., Gavrila, Gianina N., Gorgoi, Mihaela
Format: Article
Language:English
Subjects:
Inverse photoemission
Organic semiconductors
Perylene derivatives
Photoemission
Phthalocyanine
Transport gap
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Summary:The combination of valence band photoemission and inverse photoemission spectroscopy is applied to study the densities of occupied and unoccupied states of perylene derivative and phthalocyanine organic layers on inorganic semiconductors. The ionisation energies and electron affinities are determined and it is proposed that the transport gap of the materials can be evaluated from the distance of the HOMO and LUMO edges. The resulting values for the transport gap which are somewhat smaller than other published data are in good agreement with e.g. electrical measurements. The experimental spectra are compared with simulated ones obtained by density functional theory calculations.
ISSN:0301-0104
DOI:10.1016/j.chemphys.2006.02.003