Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS)

Single crystal SiC is a mechanically hard and chemically inert material used in optical and power devices. This work proposes the development of a hybrid polishing technique using a mixed abrasive slurry (MAS) with colloidal silica and nano-diamond. Hybrid removal mechanism of the MAS on the SiC is...

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Bibliographic Details
Published in:CIRP annals 2010, Vol.59 (1), p.333-336
Main Authors: Lee, H.S., Kim, D.I., An, J.H., Lee, H.J., Kim, K.H., Jeong, H.
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Mechanical engineering. Machine design
Mechanism
Polishing
Silicon carbide (SiC)
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Summary:Single crystal SiC is a mechanically hard and chemically inert material used in optical and power devices. This work proposes the development of a hybrid polishing technique using a mixed abrasive slurry (MAS) with colloidal silica and nano-diamond. Hybrid removal mechanism of the MAS on the SiC is investigated by polishing results, chemical analyses and AFM studies. Each role of two abrasives is distinguished by scratching tests with AFM contact mode on the chemically reacted SiC surface. Finally, this paper provides an optimum MAS condition to realize highly efficient material removal rate (MRR) keeping defect-free surface.
ISSN:0007-8506
DOI:10.1016/j.cirp.2010.03.114