Chemical mechanical polishing of patterned copper wafer surface using water-soluble fullerenol slurry

Cu-CMP has become a key fabrication process by which high-performance semiconductor devices are realized. Therefore, a novel Cu-CMP technique using water-soluble fullerenol slurry was developed. The experimental results show that the proposed Cu-CMP technique realizes a high material removal rate an...

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Bibliographic Details
Published in:CIRP annals 2011, Vol.60 (1), p.567-570
Main Authors: Takaya, Y., Kishida, H., Hayashi, T., Michihata, M., Kokubo, K.
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Fulleren
Mechanical engineering. Machine design
Polishing
Precision engineering, watch making
Surface
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Summary:Cu-CMP has become a key fabrication process by which high-performance semiconductor devices are realized. Therefore, a novel Cu-CMP technique using water-soluble fullerenol slurry was developed. The experimental results show that the proposed Cu-CMP technique realizes a high material removal rate and low dishing performance for the polishing of a patterned Cu-wafer. An XPS analysis and SEM observation showed that these advantageous polishing performances were achieved by the chemical effect of using fullerenol as a polishing agent. The fullerenol was found to chemically react with the copper to form a complex brittle layer which was fragile enough to be removed by rubbing with a polishing pad.
ISSN:0007-8506
DOI:10.1016/j.cirp.2011.03.068