Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

•Metal-Insulator Transition (MIT). Insulating side of the MIT.•Low temperatures.•Electrical conductivity.•Efros–Shklovskii Variable Range Hopping conduction regime. Experimental results on resistivity of the insulating samples 70Ge: Ga p-type at low temperatures has been analyzed in the insulating s...

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Bibliographic Details
Published in:Chinese journal of physics (Taipei) 2017-12, Vol.55 (6), p.2283-2290
Main Authors: Errai, Mohamed, El kaaouachi, Abdelhamid, El idrissi, Hassan, Chakhmane, Asmae
Format: Article
Language:English
Subjects:
70Ge: Ga semiconductor
Electrical transport properties
Localized state
Low temperatures
Pseudo gap
Variable Range Hopping Conductivity
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Summary:•Metal-Insulator Transition (MIT). Insulating side of the MIT.•Low temperatures.•Electrical conductivity.•Efros–Shklovskii Variable Range Hopping conduction regime. Experimental results on resistivity of the insulating samples 70Ge: Ga p-type at low temperatures has been analyzed in the insulating side of the Metal–Insulator Transition (MIT). The resistivity measurements were obtained in the temperature range 0.05–2.7 K. The five samples studied have Ga concentrations n ranging from 0.302 × 1017 to 1.84 × 1017 cm−3. On the insulating side of the MIT, the study of the effect of low temperatures T on the electrical transport shows that the temperature dependence of the electrical conductivity is found to follow the Efros–Shklovskii Variable Range Hopping regime with T−1/2. This behavior showed that long range electron-electron interaction reduces the Density Of State of carriers at the Fermi level and creates the Coulomb gap. The data are for a 70Ge:Ga sample prepared and reported by Itoh et al. [22] .
ISSN:0577-9073
DOI:10.1016/j.cjph.2017.09.013