Electronic and optical properties of InSb quantum dots from pseudopotential calculation

•Energy bandgaps of InSb spherical quantum dots.•Electron effective and heavy hole mass of InSb spherical quantum dots.•Static- and high frequency dielectric constant.•Refractive index.•Transverse effective charge. The electronic and optical features of InSb spherical quantum dots have been investig...

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Bibliographic Details
Published in:Chinese journal of physics (Taipei) 2020-08, Vol.66, p.206-213
Main Authors: Rahou, D., Bekhouche, H., Ghezal, E.A., Gueddim, A., Bouarissa, N., Ziani, H.
Format: Article
Language:English
Subjects:
InSb
Optoelectronic properties
Quantum confinement
Quantum dots
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Summary:•Energy bandgaps of InSb spherical quantum dots.•Electron effective and heavy hole mass of InSb spherical quantum dots.•Static- and high frequency dielectric constant.•Refractive index.•Transverse effective charge. The electronic and optical features of InSb spherical quantum dots have been investigated by a pseudopotential approach as a function of their radius taken in the range 1-10 nm. The direct- and indirect band gaps along with the electron and heavy hole effective masses are all found to be diminished as the quantum dot radius is increased. However, the refractive index, the static- and high frequency dielectric constant as well as the transverse effective charge are shown to be augmented by increasing the quantum dot radius. It is noted that the quantum confinement is of great impact on all the studied quantities for quantum dot radius below 6 nm. This could result in more opportunities to obtain desired optoelectronic properties that cannot be obtained in the bulk InSb materials.
ISSN:0577-9073
DOI:10.1016/j.cjph.2020.05.001