Quantum magneto-transport properties of GaAs/AlxGa1-xAs Weakly coupled quantum wells for near wavelength infrared detection

• Published in: Computational Condensed Matter 2021-09, Vol.28, p.e00571, Article e00571
• Main Authors: Melkoud, Samir, Nafidi, Abdelhakim, Benaadad, Merieme, Soubane, Driss
• Format: Article
• Language: English
• Subjects: Bands structure; GaAs/AlxGa1-xAs multiple quantum wells; Infrared detectors; Magneto-transport; Shubnikov-de Haas and quantum Hall effects
• ISSN: 2352-2143; 2352-2143
• DOI: 10.1016/j.cocom.2021.e00571

We investigated here the GaAs(d1 = 184 Å)/Al0.18Ga0.82As (d2 = 42 Å) multiple quantum wells based on our enhanced numerical calculations in the envelope function formalism. We calculated the band structures and the effective mass mi* of charge carriers. When the well thickness d1 increases, the bandgap Eg decreases like m*. The calculated Fermi level energy and the density of states show n-type conductivity and a quasi-two-dimensional transport character. When the barrier thickness d2 increases the bandwidth decreases as a result of the weakening of interlayer tunnelling along the growth direction in the first Brillouin zone. We also interpreted theoretically the Shubnikov-de Haas and quantum Hall effects measurements reported by B. G. Tavares et al. These results are necessary for the design and engineering of multiple quantum wells infrared detectors. •Band structures, effective mass and magneto-transport parameters of GaAs/AlGaAs multiple quantum wells were calculated.•Bandgap and effective mass decreases when the well thickness d1 increases in this near wavelength infrared Detector.•Inter-layers tunneling increases bands' width when the barrier thicknesses d2 decreases.•Fermi level energy position on the density of states shown n-type and quasi-two-dimensional conductivity.•Interpretation of Shubnikov-de Haas and quantum Hall effects observed by B. G. Tavares et al.