Simulation and experimental study on the effect of abrasive size, rotational speed, and machining gap during ultra-precision polishing of monocrystalline silicon

• Published in: Colloids and surfaces. A, Physicochemical and engineering aspects Physicochemical and engineering aspects, 2019-08, Vol.575, p.50-56
• Main Authors: Mosavat, Mohammad, Rahimi, Abdolreza
• Format: Article
• Language: English
• Subjects: Al2O3; FEM/SPH; Magnetic Abrasive Finishing; Material removal; Nano-finishing; Silicon wafer; Surface roughness
• ISSN: 0927-7757; 1873-4359
• DOI: 10.1016/j.colsurfa.2019.05.005

[Display omitted] Monocrystalline silicon wafers are the key materials for micro-electro-mechanical-systems. These wafers require high surface quality with damage-free subsurface. Because of the high-speed deformation during the ultra-precision polishing of these wafers, Smoothed Particle Hydrodynamics (SPH) which is a meshless method with good self-adaptability can be useful in the simulation of the polishing process. In this work, SPH analysis model of Magnetic Abrasive finishing (MAF) is established according to the principle of the polishing process. Moreover, experiments are done to reveal the effects of polishing variables on the reduction in surface roughness (ΔRa) and material removal (MR). Also, verification of simulation results is done with experiments. Our findings showed that MR and ΔRa value increase with increasing abrasive size, rotational speed and, decreasing machining gap. According to our experimental findings, maximum ΔRa and MR are 0.65 and 39.09 mg, respectively. Finally, it is possible to optimize polishing parameters and provide the theoretical guidance for production.