P-doped in the shell of Ni@WO3-δ nanocomposites induced electronic structure change for improving microwave absorption performance

• Published in: Colloids and surfaces. A, Physicochemical and engineering aspects Physicochemical and engineering aspects, 2024-01, Vol.680, p.132607, Article 132607
• Main Authors: Bao, Xiu-Kun, Shi, Gui-Mei, Gao, Qiang, Liu, Feng, Yu, Di, Wang, Xiao-Lei
• Format: Article
• Language: English
• Subjects: absorption; Arc-discharge method; electrical conductivity; electromagnetic radiation; First-principles; Microwave absorption; nanocomposites; Oxygen vacancy defects; P-doped WO3-δ; phosphorylation
• ISSN: 0927-7757; 1873-4359
• DOI: 10.1016/j.colsurfa.2023.132607

In this work, we reported P-doped WO3-δ coated Ni (Ni@P-WO3-δ) nanocomposites prepared by the arc discharge method with a subsequent phosphorylation treatment, where the Ni@P-WO3-δ nanocomposites exhibited a tunable electromagnetic wave absorption (EMA) performances by the doping P into the surface shell WO3-δ compared with the Ni@WO3-δ. The experimental evidence combined with the theory calculation results based on First-principles revealed that the doping P into the WO3-δ endowed improvable electrical conductivity, resulting in higher conduction loss for the Ni@P-WO3-δ nanocomposites. Meanwhile, P doping causes more defects and distorted lattice for the WO3-δ shell, which enhances defect-induced polarization loss. As a result, enhanced conduction loss and polarization relaxation loss of the Ni@P-WO3-δ nanocomposites are dominant for improving EMA performance. Further, the study found that the EMA properties of the Ni@P-WO3-δ nanocomposites are related to P doping content and can be tailored efficiently by controlling the amount of P dopant source. Thus, the Ni@P-WO3-δ nanocomposites with appropriate P doping can optimize their balance between impedance matching and dielectric loss, achieving excellent microwave absorption performance. The minimum reflection loss (RL) value of the Ni@P-WO3-δ nanocomposites was − 55.62 dB, and the efficient absorption bandwidth achieved in 12.58 GHz, with a thickness rang of 1.61–5.00 mm. Therefore, this work confirms that doping engineering has a significant application for the design and synthesis of dielectric-typed microwave absorbers. [Display omitted]