Spin gapless semiconductors in antiferromagnetic monolayer HC 4 N 3 BN under strain

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Bibliographic Details
Published in:Computational materials science 2022-02, Vol.203, p.111110, Article 111110
Main Authors: Phong, Pham Nam, Nguyen, Huy-Viet
Format: Article
Language:English
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ISSN:0927-0256
DOI:10.1016/j.commatsci.2021.111110