Bipolar ferromagnetic semiconductor with large magnetic moment: EuGe2 monolayer

[Display omitted] Two-dimensional (2D) ferromagnetic semiconductors having both ferromagnetism and semi-conductivity hold exciting and promising potentials in spintronic devices at nanoscale. In this work, we explored the electronic and magnetic properties of EuGe2 monolayer via conducting the first...

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Bibliographic Details
Published in:Computational materials science 2022-10, Vol.213, p.111611, Article 111611
Main Authors: Gao, Zhihao, Wang, Yuwan, Gao, Jinwei, Cui, Zichun, Zhang, Xian, Shi, Junqin, Fan, Xiaoli
Format: Article
Language:English
Subjects:
Bipolar magnetic semiconductor
Density functional theory
Strain engineering
Two-dimensional materials
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Summary:[Display omitted] Two-dimensional (2D) ferromagnetic semiconductors having both ferromagnetism and semi-conductivity hold exciting and promising potentials in spintronic devices at nanoscale. In this work, we explored the electronic and magnetic properties of EuGe2 monolayer via conducting the first-principles calculations. The electronic band structure shows that EuGe2 monolayer is a bipolar magnetic semiconductor with a band gap of 0.55 eV based on the Heyd-Scuseria-Ernzerhof (HSE06) method. The magnetic moment and Curie temperature of EuGe2 monolayer are calculated to be 7 μBf.u.−1 and 23 K based on the Heisenberg model. Its perpendicular magnetic anisotropy (PMA) energy is 3.62 meV per formula unit. Additionally, the Curie temperature of EuGe2 monolayer is increased by 400% under −8% biaxial compressive stain. Our calculation results suggest that EuGe2 monolayer has potential applications in the field of spintronic devices.
ISSN:0927-0256
1879-0801
DOI:10.1016/j.commatsci.2022.111611