Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

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Bibliographic Details
Published in:Computational materials science 2024-01, Vol.231, p.112622, Article 112622
Main Authors: Zhang, Zhineng, Zhou, Yu, Zhao, Puqin, Zhu, Jun, Cheng, Yingchun
Format: Article
Language:English
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ISSN:0927-0256
DOI:10.1016/j.commatsci.2023.112622