Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires

Vertically aligned zinc oxide nanowires are selectively grown on sapphire substrates via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The microsquares are defined by e-beam lithography and treated by chemical etching with a result of increased surface roughness that can...

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Bibliographic Details
Published in:Chemical physics letters 2008-09, Vol.463 (1), p.141-144
Main Authors: Ho, Shu-Te, Wang, Chiu-Yen, Liu, Hsiang-Lin, Lin, Heh-Nan
Format: Article
Language:English
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Summary:Vertically aligned zinc oxide nanowires are selectively grown on sapphire substrates via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The microsquares are defined by e-beam lithography and treated by chemical etching with a result of increased surface roughness that can facilitate nanowire growth. An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2008.08.037