The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni

[Display omitted] ► The effect of p-type doping by Ag and Ni was investigated. ► Ag and Ni cations are spontaneously reduced on the SWCNT surface. ► Electronic structure of the SWCNT TCFs was changed by the dopants. ► Fermi level of the SWCNTs shifts toward the valance band due to the dopants. ► Ag...

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Bibliographic Details
Published in:Chemical physics letters 2012-10, Vol.548, p.29-33
Main Authors: Oh, Hyun Seok, Shin, Kwonwoo, Lee, Su Jeong, Shim, Daeseob, Han, Jong Hun, Myoung, Jae-Min
Format: Article
Language:English
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Summary:[Display omitted] ► The effect of p-type doping by Ag and Ni was investigated. ► Ag and Ni cations are spontaneously reduced on the SWCNT surface. ► Electronic structure of the SWCNT TCFs was changed by the dopants. ► Fermi level of the SWCNTs shifts toward the valance band due to the dopants. ► Ag and Ni are promising materials for improving the electrical properties of SWCNT. The effect of p-type doping by spontaneous reduction using Ag and Ni on electrical properties of single-walled carbon nanotube (SWCNT) transparent conductive films was investigated. The Ag- and Ni-doped SWCNT films have a transmittance of 86.9–88.4% at 550nm and a sheet resistance of 226–513Ω/sq in a range of the concentration from 10 to 200mM. Using Raman and UV–vis–NIR spectroscopy, it was observed that the electrical structure of SWCNTs is changed by p-type doping. So, Ag and Ni could be used as effective p-type dopants to improve electrical properties of SWCNT films.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2012.08.005