Memory effect in organic transistor: Controllable shifts in threshold voltage

[Display omitted] ► Nanoparticles were incorporated in organic transistors to investigate memory effect. ► A significant shift in threshold voltage under different applied voltages observed. ► The nanoparticles are acting as a carrier trapping center for the memory effect. A silver nanoparticles sel...

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Bibliographic Details
Published in:Chemical physics letters 2012-11, Vol.551, p.105-110
Main Authors: Lee, Keanchuan, Weis, Martin, Taguchi, Dai, Manaka, Takaaki, Iwamoto, Mitsumasa
Format: Article
Language:English
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Summary:[Display omitted] ► Nanoparticles were incorporated in organic transistors to investigate memory effect. ► A significant shift in threshold voltage under different applied voltages observed. ► The nanoparticles are acting as a carrier trapping center for the memory effect. A silver nanoparticles self-assembled monolayer was incorporated in pentacene field-effect transistors and their memory effects were investigated using the current–voltage measurement. The results showed that there was a significant shift in threshold voltage under different writing and erasing voltages applied on the gate electrode and the memory window changed accordingly with mentioned applied voltage bias. Charge retention time was estimated up to 2000s even under different biased voltages. On the other hand, the reference OFETs without a nanoparticle layer exhibited no memory effects. Further, accelerated aging study of the organic transistors with nanoparticles revealed the conservation of memory window.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2012.09.022