Spatially-resolved spectroscopic investigations on the formation of PtSi by annealing on a silicon surface

[Display omitted] •Spatially-resolved spectroscopic investigations on the annealing effect of a Pt (100Å)/Si interface.•A spatially non-uniform growth pattern of PtSi was shown.•Both in-plane and out-of-plane inhomogeneous growth of PtSi appeared at 773K. We report spatially-resolved spectroscopic i...

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Bibliographic Details
Published in:Chemical physics letters 2014-07, Vol.608, p.324-327
Main Authors: Kumar, Yogesh, Yang, Mihyun, Ihm, Kyuwook, Lee, Kyoung-Jae, Hwang, Chan Cuk
Format: Article
Language:English
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Summary:[Display omitted] •Spatially-resolved spectroscopic investigations on the annealing effect of a Pt (100Å)/Si interface.•A spatially non-uniform growth pattern of PtSi was shown.•Both in-plane and out-of-plane inhomogeneous growth of PtSi appeared at 773K. We report spatially-resolved spectroscopic investigations on the effect of annealing a Pt (100Å)/Si interface in the presence of a native silicon oxide layer. Scanning photoelectron microscopy showed a spatially non-uniform growth pattern of PtSi depending on the annealing temperature and annealing time. Pt 4f and Si 2p core-level spectra measured using different photon energies and at different points suggest both in-plane and out-of-plane inhomogeneous growth of PtSi at 773K.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2014.06.014