Resistive switching memory characteristics of single MoSe2 nanorods

• Published in: Chemical physics letters 2015-10, Vol.638, p.103-107
• Main Authors: Yan, Yongming, Sun, Bai, Ma, Dejian
• Format: Article
• Language: English
• ISSN: 0009-2614; 1873-4448
• DOI: 10.1016/j.cplett.2015.08.035

In this work, the MoSe2 nanorods were prepared by hydrothermal method. Further, a resistive switching memory device with single MoSe2 nanorods is demonstrated. The device presents stable resistive switching memory behaviors at room temperature. •MoSe2 nanorods were prepared by hydrothermal method.•A resistive switching device with single MoSe2 nanorods is demonstrated.•The device presents stable resistive switching memory behaviors at room temperature.•A model of conductive filament is suggested to explain the memory behaviors. Resistive switching memory effect in metal–oxide–metal structures is a fascinating phenomenon toward next generation universal nonvolatile memories. Herein, the MoSe2 nanorods were prepared by hydrothermal method. Further, a resistive switching memory device of single MoSe2 nanorods is demonstrated. The device presents stable resistive switching memory behaviors with on–off ratio (memory window) of ∼50 at room temperature. Moreover, the origin of switching behavior in these devices on the basis of formation and annihilation of conducting filaments is addressed. This study is useful for exploring the multifunctional materials and their applications in nonvolatile memory devices.