Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

[Display omitted] •A resistive switching memory device with Ag/TiO2/Ti structure was prepared.•The amorphous TiO2 thin film was grown on Ti foil by anodic oxidation.•The HRS/LRS resistance ratio is largest when oxidization time is 5 min.•The model of filament switching is suggested to explain the me...

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Bibliographic Details
Published in:Chemical physics letters 2018-08, Vol.706, p.477-482
Main Authors: Yu, Yanmei, Yang, Feng, Mao, Shuangsuo, Zhu, Shouhui, Jia, Yongfang, Yuan, Ling, Salmen, Mayameen, Sun, Bai
Format: Article
Language:English
Subjects:
Amorphous TiO2
Anodic oxidation
Conductive filaments
Memory device
Resistive switching
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Summary:[Display omitted] •A resistive switching memory device with Ag/TiO2/Ti structure was prepared.•The amorphous TiO2 thin film was grown on Ti foil by anodic oxidation.•The HRS/LRS resistance ratio is largest when oxidization time is 5 min.•The model of filament switching is suggested to explain the memory behavior. Resistance random access memory (RRAM) is a promising memory technology in the applications of memory device. Herein, the amorphous TiO2 thin film was grown onto titanium (Ti) foil by anodic oxidation. Further, the Ag/TiO2/Ti sandwich structure device was prepared, which displays a resistive switching memory effect with a high HRS/LRS resistance ratio with ∼27 at room temperature when the TiO2 film was oxidized ∼5 min. Finally, the formation/rupture models of Ag conductive filaments are suggested to explain the resistive switching memory behavior. This work open a new way for preparing the RRAM device for memory applications in the future.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2018.06.063