Voltage-assisted SILAR deposition of CdSe quantum dots into mesoporous TiO2 film for quantum dot-sensitized solar cells

[Display omitted] •External voltage drives CdSe QDs growth quickly in the mesoporous TiO2 film at room temperature.•An optimal efficiency of 3.27% for the CdSe QDSSCs is received.•This work provides a fast and efficient assembly strategy to enhance the performance of QDSSCs. CdSe quantum dots (QDs)...

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Bibliographic Details
Published in:Chemical physics letters 2019-11, Vol.735, p.136764, Article 136764
Main Authors: Jin, Bin Bin, Wang, Dan Jun, Kong, Shu Ying, Zhang, Guo Qing, Huang, Hui Sheng, Liu, Yan, Liu, Hai Quan, Wu, Jing, Zhao, Liang Hong, He, Deng
Format: Article
Language:English
Subjects:
Electrodeposition
Energy storage and conversion
Nanoparticles
Semiconductors
Solar energy materials
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Summary:[Display omitted] •External voltage drives CdSe QDs growth quickly in the mesoporous TiO2 film at room temperature.•An optimal efficiency of 3.27% for the CdSe QDSSCs is received.•This work provides a fast and efficient assembly strategy to enhance the performance of QDSSCs. CdSe quantum dots (QDs) grows slowly in mesoporous TiO2 film deriving from a large lattice mismatch (11%) and poor interaction between the two, which resulting the low power conversion efficiency (PCE) of quantum dot-sensitized solar cells (QDSSCs). An external voltage is applied in the successive ionic layer adsorption reaction (SILAR) process, which drives the Cd2+ and SeSO32− ions quickly diffused into the mesoporous TiO2 film and reacted to form CdSe QDs at room temperature. The CdSe QDSSCs yields a PCE of 3.27%. This work provides an efficient strategy to assemble QDs for enhancing the performance of QDSSCs.
ISSN:0009-2614
1873-4448
DOI:10.1016/j.cplett.2019.136764