Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD

Repetition of high rate homoepitaxial growth of diamond by microwave plasma CVD has been successfully applied to the growth of single-crystal diamonds with the thickness as large as 10 mm. By optimizing the shape of the substrate holder, smooth and flat surface morphology suitable for regrowth has b...

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Bibliographic Details
Published in:Diamond and related materials 2005-11, Vol.14 (11), p.1743-1746
Main Authors: Mokuno, Y., Chayahara, A., Soda, Y., Horino, Y., Fujimori, N.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from vapor
High rate growth
Homoepitaxial growth
Materials science
Methods of crystal growth
physics of crystal growth
Microwave plasma CVD
Physics
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Summary:Repetition of high rate homoepitaxial growth of diamond by microwave plasma CVD has been successfully applied to the growth of single-crystal diamonds with the thickness as large as 10 mm. By optimizing the shape of the substrate holder, smooth and flat surface morphology suitable for regrowth has been obtained. Using this condition, a 4.65 ct single-crystal diamond with the thickness of 1 cm has been grown on a HPHT synthetic 5 × 5 × 0.7 mm 3 seed by 24 times repetition of high rate growth with the average growth rate of 68 μm/h. Also a method to enlarge the size of diamond three-dimensionally by growing on side {100} surface of a thick diamond prepared by this technique has been demonstrated.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2005.09.020