Loading…
Raman spectroscopy analysis of the chemical structure of diamond-like carbon films deposited via high-frequency inclusion high-power impulse magnetron sputtering
Aiming to develop a new high-power impulse magnetron sputtering (HiPIMS) method to further improve the functionality of thin films, we previously designed a high-frequency inclusion HiPIMS (HF-HiPIMS) power supply for obtaining high-performance diamond-like carbon (DLC) films. Herein, the chemical s...
Saved in:
Published in: | Diamond and related materials 2024-02, Vol.142, p.110768, Article 110768 |
---|---|
Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Aiming to develop a new high-power impulse magnetron sputtering (HiPIMS) method to further improve the functionality of thin films, we previously designed a high-frequency inclusion HiPIMS (HF-HiPIMS) power supply for obtaining high-performance diamond-like carbon (DLC) films. Herein, the chemical structure of DLC films deposited via HF-HiPIMS was analyzed using Raman spectroscopy. First, the peak positions were fixed, and the number of fitting parameters was reduced by conducting a waveform separation of the initial Raman spectrum using a differential spectrum method. Next, the Raman spectra of the DLC films subjected to five-peak separation and two-peak separation analyses were compared, and the limitations of the two-peak separation analysis are discussed. Furthermore, the relation between the Raman parameters of the five-peak separation analysis and film properties suggested that Raman spectroscopy could be used to estimate the sp3 C–C/(sp3 C–C + sp2 C=C) ratio.
[Display omitted]
•DLC films deposited via HF-HiPIMS were analyzed using Raman spectroscopy.•Five-peak Raman spectra were separated by differential spectra.•Number of parameters related to peak positions was reduced.•sp3 C–C ratio was evaluated using Raman parameters. |
---|---|
ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2023.110768 |