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Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties
We report the synthesis and characterization of highly air and temperature stable, solution-processed, n-type organic semiconductors: a perylene-diimide monomer and a perylene-diimide-based pendant polymer. When integrated into a transistor structure, both materials possess pure n-type transport wit...
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Published in: | Dyes and pigments 2020-03, Vol.174, p.108014, Article 108014 |
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creator | Yuen, Jonathan D. Pozdin, Vladimir A. Young, Ashlyn T. Turner, Brendan L. Giles, Ian D. Naciri, Jawad Trammell, Scott A. Charles, Paul T. Stenger, David A. Daniele, Michael A. |
description | We report the synthesis and characterization of highly air and temperature stable, solution-processed, n-type organic semiconductors: a perylene-diimide monomer and a perylene-diimide-based pendant polymer. When integrated into a transistor structure, both materials possess pure n-type transport with mobility as high as 10−5 cm2 V−1 s−1 for the polymer. The organic semiconductors exhibit good photoconductor properties, with photocurrent to dark current ratios of up to 103 for the monomer, despite its lower FET mobility. The differences in transistor and photoconductor properties suggest different applications for each material. Both materials can be processed in air, and their transport properties have good air stability, improving with annealing even up to 200 °C in air. It is notable that such air-stable photoconductivity and transport properties have rarely been reported for n-type organic semiconductors before, as most n-type organic semiconductors are not stable in air. Hence, these materials may have potential in a wide range of applications.
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•Perylene-diimide-based acrylate monomer and polymer n-type organic semiconductors are synthesized.•Monomer and polymer transistors exhibit pure n-type transport with mobility of 10-5 cm2·V-1·s-1 for polymer devices.•When integrated into a photovoltaic architecture, photocurrent to dark current ratios of up to 103 were realized.•Annealing in ambient atmosphere improved the air and temperature stability of perylene-diimide-based polymer devices. |
doi_str_mv | 10.1016/j.dyepig.2019.108014 |
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[Display omitted]
•Perylene-diimide-based acrylate monomer and polymer n-type organic semiconductors are synthesized.•Monomer and polymer transistors exhibit pure n-type transport with mobility of 10-5 cm2·V-1·s-1 for polymer devices.•When integrated into a photovoltaic architecture, photocurrent to dark current ratios of up to 103 were realized.•Annealing in ambient atmosphere improved the air and temperature stability of perylene-diimide-based polymer devices.</description><identifier>ISSN: 0143-7208</identifier><identifier>EISSN: 1873-3743</identifier><identifier>DOI: 10.1016/j.dyepig.2019.108014</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Air stable ; Field effect transistor ; n-type ; Perylene ; Photoconductor</subject><ispartof>Dyes and pigments, 2020-03, Vol.174, p.108014, Article 108014</ispartof><rights>2019 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c389t-676f81c025e64e9b05eef275c4c6436501bf89b28085e1e0fdc487818f35807f3</citedby><cites>FETCH-LOGICAL-c389t-676f81c025e64e9b05eef275c4c6436501bf89b28085e1e0fdc487818f35807f3</cites><orcidid>0000-0001-9288-8585</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yuen, Jonathan D.</creatorcontrib><creatorcontrib>Pozdin, Vladimir A.</creatorcontrib><creatorcontrib>Young, Ashlyn T.</creatorcontrib><creatorcontrib>Turner, Brendan L.</creatorcontrib><creatorcontrib>Giles, Ian D.</creatorcontrib><creatorcontrib>Naciri, Jawad</creatorcontrib><creatorcontrib>Trammell, Scott A.</creatorcontrib><creatorcontrib>Charles, Paul T.</creatorcontrib><creatorcontrib>Stenger, David A.</creatorcontrib><creatorcontrib>Daniele, Michael A.</creatorcontrib><title>Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties</title><title>Dyes and pigments</title><description>We report the synthesis and characterization of highly air and temperature stable, solution-processed, n-type organic semiconductors: a perylene-diimide monomer and a perylene-diimide-based pendant polymer. When integrated into a transistor structure, both materials possess pure n-type transport with mobility as high as 10−5 cm2 V−1 s−1 for the polymer. The organic semiconductors exhibit good photoconductor properties, with photocurrent to dark current ratios of up to 103 for the monomer, despite its lower FET mobility. The differences in transistor and photoconductor properties suggest different applications for each material. Both materials can be processed in air, and their transport properties have good air stability, improving with annealing even up to 200 °C in air. It is notable that such air-stable photoconductivity and transport properties have rarely been reported for n-type organic semiconductors before, as most n-type organic semiconductors are not stable in air. Hence, these materials may have potential in a wide range of applications.
[Display omitted]
•Perylene-diimide-based acrylate monomer and polymer n-type organic semiconductors are synthesized.•Monomer and polymer transistors exhibit pure n-type transport with mobility of 10-5 cm2·V-1·s-1 for polymer devices.•When integrated into a photovoltaic architecture, photocurrent to dark current ratios of up to 103 were realized.•Annealing in ambient atmosphere improved the air and temperature stability of perylene-diimide-based polymer devices.</description><subject>Air stable</subject><subject>Field effect transistor</subject><subject>n-type</subject><subject>Perylene</subject><subject>Photoconductor</subject><issn>0143-7208</issn><issn>1873-3743</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAUhYMoOI7-Axf9A6k3TR_pRpDBFwzoQtchTW6cDNMHSUbpxt9uS8Wlq8s9nO9w7yHkmkHKgJU3-9SMOLiPNANWT5IAlp-QFRMVp7zK-SlZTQqnVQbinFyEsAcAwTO2It-v6McDdkiNc60zSBsV0CQdjeOAScDW6b4zRx17H5IvF3cJdjvV6cmjnE9UZ5KI7YBexaOfgKiaAybDro_9H7i4vOqCC_M6-H4CosNwSc6sOgS8-p1r8v5w_7Z5otuXx-fN3ZZqLupIy6q0gmnICixzrBsoEG1WFTrXZc7LAlhjRd1kAkSBDMEanYtKMGF5IaCyfE3yJVf7PgSPVg7etcqPkoGcO5R7uXQo5w7l0uGE3S4YTrd9OvQyaIfz886jjtL07v-AH_Bkf-M</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Yuen, Jonathan D.</creator><creator>Pozdin, Vladimir A.</creator><creator>Young, Ashlyn T.</creator><creator>Turner, Brendan L.</creator><creator>Giles, Ian D.</creator><creator>Naciri, Jawad</creator><creator>Trammell, Scott A.</creator><creator>Charles, Paul T.</creator><creator>Stenger, David A.</creator><creator>Daniele, Michael A.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-9288-8585</orcidid></search><sort><creationdate>20200301</creationdate><title>Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties</title><author>Yuen, Jonathan D. ; Pozdin, Vladimir A. ; Young, Ashlyn T. ; Turner, Brendan L. ; Giles, Ian D. ; Naciri, Jawad ; Trammell, Scott A. ; Charles, Paul T. ; Stenger, David A. ; Daniele, Michael A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c389t-676f81c025e64e9b05eef275c4c6436501bf89b28085e1e0fdc487818f35807f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Air stable</topic><topic>Field effect transistor</topic><topic>n-type</topic><topic>Perylene</topic><topic>Photoconductor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yuen, Jonathan D.</creatorcontrib><creatorcontrib>Pozdin, Vladimir A.</creatorcontrib><creatorcontrib>Young, Ashlyn T.</creatorcontrib><creatorcontrib>Turner, Brendan L.</creatorcontrib><creatorcontrib>Giles, Ian D.</creatorcontrib><creatorcontrib>Naciri, Jawad</creatorcontrib><creatorcontrib>Trammell, Scott A.</creatorcontrib><creatorcontrib>Charles, Paul T.</creatorcontrib><creatorcontrib>Stenger, David A.</creatorcontrib><creatorcontrib>Daniele, Michael A.</creatorcontrib><collection>CrossRef</collection><jtitle>Dyes and pigments</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yuen, Jonathan D.</au><au>Pozdin, Vladimir A.</au><au>Young, Ashlyn T.</au><au>Turner, Brendan L.</au><au>Giles, Ian D.</au><au>Naciri, Jawad</au><au>Trammell, Scott A.</au><au>Charles, Paul T.</au><au>Stenger, David A.</au><au>Daniele, Michael A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties</atitle><jtitle>Dyes and pigments</jtitle><date>2020-03-01</date><risdate>2020</risdate><volume>174</volume><spage>108014</spage><pages>108014-</pages><artnum>108014</artnum><issn>0143-7208</issn><eissn>1873-3743</eissn><abstract>We report the synthesis and characterization of highly air and temperature stable, solution-processed, n-type organic semiconductors: a perylene-diimide monomer and a perylene-diimide-based pendant polymer. When integrated into a transistor structure, both materials possess pure n-type transport with mobility as high as 10−5 cm2 V−1 s−1 for the polymer. The organic semiconductors exhibit good photoconductor properties, with photocurrent to dark current ratios of up to 103 for the monomer, despite its lower FET mobility. The differences in transistor and photoconductor properties suggest different applications for each material. Both materials can be processed in air, and their transport properties have good air stability, improving with annealing even up to 200 °C in air. It is notable that such air-stable photoconductivity and transport properties have rarely been reported for n-type organic semiconductors before, as most n-type organic semiconductors are not stable in air. Hence, these materials may have potential in a wide range of applications.
[Display omitted]
•Perylene-diimide-based acrylate monomer and polymer n-type organic semiconductors are synthesized.•Monomer and polymer transistors exhibit pure n-type transport with mobility of 10-5 cm2·V-1·s-1 for polymer devices.•When integrated into a photovoltaic architecture, photocurrent to dark current ratios of up to 103 were realized.•Annealing in ambient atmosphere improved the air and temperature stability of perylene-diimide-based polymer devices.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.dyepig.2019.108014</doi><orcidid>https://orcid.org/0000-0001-9288-8585</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Air stable Field effect transistor n-type Perylene Photoconductor |
title | Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties |
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