Efficient solution-processed OLEDs featuring deep-blue triplet-triplet annihilation emitter based on pyrene derivative

Achieving high efficiency deep-blue organic light-emitting diodes (OLEDs) with a CIEy < 0.08 is still terribly urgent yet challenge. Herein, we designed and synthesized a novel blue triplet-triplet annihilation (TTA) emitter with a fan-shape torsional molecular structure, namely TbuPyB, which is...

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Published in:Dyes and pigments 2023-08, Vol.216, p.111346, Article 111346
Main Authors: Ding, Zhenming, Ma, Bin, Zhou, Zhongxin, Zhang, Shiyue, Pan, Jie, Zhu, Weiguo, Liu, Yu
Format: Article
Language:English
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Summary:Achieving high efficiency deep-blue organic light-emitting diodes (OLEDs) with a CIEy < 0.08 is still terribly urgent yet challenge. Herein, we designed and synthesized a novel blue triplet-triplet annihilation (TTA) emitter with a fan-shape torsional molecular structure, namely TbuPyB, which is based on benzene as core and three tert-butylpyrene as arm. The photophysical, electrochemical and electroluminescent performances of TbuPyB were systematically investigated. Intense deep-blue/blue emissions peaked at 413 and 472 nm are observed in the 7 wt% doped 1,3-bis(N-carbazolyl)benzene (mCP) thin film and neat film, accompanied by absolute photoluminescence (PL) quantum yield (PLQY) of 66.3% and 74.8%, respectively. Contributed by the TTA process, the solution-processed non-doped device exhibits blue emission peak at 470 nm with an impressive EQE of 10.65% and a CIE coordinates of (0.15, 0.20) at the voltage of 7.8 V. In contrary, at the 7 wt% dopant concentration, an outstandingly 57 nm violet-shifted deep-blue emission at 413 nm with an EQE of 6.87% and a CIE coordinates of (0.15, 0.06) was achieved in the doped device. These results schedule a novel avenue for designing highly efficient deep-blue emitter in the solution processable OLEDs. A novel deep blue emitting material, TbuPyB, with a fan-shape torsional molecular structure and triplet-triplet annihilation (TTA) characteristic, was primarily designed and employed as guest emitter. In the solution processable OLEDs, the non-doped device exhibits blue emission peak at 470 nm with an impressive EQE of 10.6% and a CIE coordinates of (0.15, 0.20). Correspondingly, at the 7 wt% dopant concentration, an outstandingly 57 nm violet-shifted deep-blue emission at 413 nm with an EQE of 6.87% and a CIE coordinates of (0.15, 0.06) was achieved in the doped device. [Display omitted] •A deep-blue emitter TbuPyB with TTA characteristic is innovatively achieved.•The unique fan-shape torsional molecular structure further reduce the aggregation and realize high quantum yield 74.8%.•The solution processable non-doped device exhibits blue emission at 470 nm with an impressive EQE of 10.65%.•An outstandingly 57 nm violet-shifted deep-blue emission at 413 nm with a maximum EQE of 6.87% was achieved in the doped device.
ISSN:0143-7208
1873-3743
DOI:10.1016/j.dyepig.2023.111346