Charge Carrier Lifetime Shift Induced by Temperature Variation during a MWPCD Measurement

In this work the temperature of a silicon sample excited by a laser during a time dependent microwave-detected photoconductance decay (MWPCD) measurement was logged. 2°C temperature increase on the backside of the wafer was observed. Temperature dependent charge carrier lifetime calculations using t...

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Bibliographic Details
Published in:Energy procedia 2013, Vol.38, p.153-160
Main Authors: Möller, Christian, Lauer, Kevin
Format: Article
Language:English
Subjects:
boron-oxygen related defect
charge carrier lifetime
MWPCD
temperature variation
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Summary:In this work the temperature of a silicon sample excited by a laser during a time dependent microwave-detected photoconductance decay (MWPCD) measurement was logged. 2°C temperature increase on the backside of the wafer was observed. Temperature dependent charge carrier lifetime calculations using the determined temperature characteristic are compared to time dependent MWPCD measurements of a boron-doped wafer with high oxygen content. The time duration to reach the final temperature fits well with the time scale of the fast forming recombination center of the boron-oxygen related defect. Charge carrier lifetime variation due to temperature increase is discussed in view of different defect parameters.
ISSN:1876-6102
1876-6102
DOI:10.1016/j.egypro.2013.07.262