Enhanced Efficiency by the Effect of Strain on the Structure of a Solar Cell

This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher indiu...

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Bibliographic Details
Main Authors: Aissat, A., Bestam, R., M.El.Bey, Vilcot, J.P.
Format: Conference Proceeding
Language:English
Subjects:
III-V semiconductors
new materials
solar cells
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Summary:This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher indium concentration, the band gap energy decreases considerably. We found that the efficiency reaches 18% in a lattice-matched δ=50A. For a concentration x > 0.48, we have a compressive strain Δa/a > 0 which leads to a higher efficiency. For x=90%, δ=5nm and a strain equal Δa/a= 3%, we achieved an efficiency of 27%. The results show that light conversion efficiency has considerably boosted by varying insulating strain values.
ISSN:1876-6102
1876-6102
DOI:10.1016/j.egypro.2014.06.100