Combined Impact of Heterogeneous Lifetime and Gettering on Solar Cell Performance

• Published in: Energy procedia 2015-08, Vol.77, p.119-128
• Main Authors: Morishige, Ashley E., Wagner, Hannes, Hofstetter, Jasmin, Avci, Ibrahim, del Cañizo, Carlos, Buonassisi, Tonio
• Format: Article
• Language: English
• Subjects: efficiency; iron; lifetime; phosphorus diffusion gettering; photovoltaics; processing; Sentaurus TCAD; silicon; simulator; solar
• ISSN: 1876-6102; 1876-6102
• DOI: 10.1016/j.egypro.2015.07.019

We couple numerical process and device simulations to provide a framework for understanding the combined effects of as-grown wafer impurity distribution, processing parameters, and solar cell architecture. For this study, we added the Impurity-to-Efficiency simulator to Synopsys’ Sentaurus Process software using the Alagator Scripting Language. Our results quantify how advanced processing can eliminate differences in efficiency due to different as-grown impurity concentrations and due to different area fractions of defective wafer regions. We identify combinations of as-grown impurity distributions and process parameters that produce solar cells limited by point defects and those that are limited by precipitated impurities. Gettering targeted at either point defect or precipitate reduction can then be designed and applied to increase cell efficiency. We also visualize the post-processing iron and total recombination distributions in 2D maps of the wafer cross-section. PV researchers and companies can input their initial iron distributions and processing parameters into our software and couple the resulting process simulation results with a solar cell device design of interest to conduct their own analyses. The Alagator scripts we developed are freely available online at http://pv.mit.edu/impurity-to-efficiency-i2e-simulator-for-sentaurus-tcad/.