Manufacturing and Characterization of III-V on Silicon Multijunction Solar Cells

Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an S-shaped J-V curve with a kink close to Voc caused...

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Bibliographic Details
Published in:Energy procedia 2016-08, Vol.92, p.242-247
Main Authors: Veinberg-Vidal, Elias, Dupré, Cécilia, Garcia-Linares, Pablo, Jany, Christophe, Thibon, Romain, Card, Tiphaine, Salvetat, Thierry, Scheiblin, Pascal, Brughera, Céline, Fournel, Frank, Desieres, Yohan, Veschetti, Yannick, Sanzone, Vincent, Mur, Pierre, Decobert, Jean, Datas, Alejandro
Format: Article
Language:English
Subjects:
direct wafer bonding
III-V on silicon
multijunction
photovoltaics
solar cells
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Summary:Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an S-shaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2cm2 cell.
ISSN:1876-6102
1876-6102
DOI:10.1016/j.egypro.2016.07.066